• DocumentCode
    910005
  • Title

    The effects of BJT self-heating on circuit behavior

  • Author

    Fox, Robert M. ; Lee, Sang-Gug ; Zweidinger, David T.

  • Author_Institution
    Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
  • Volume
    28
  • Issue
    6
  • fYear
    1993
  • fDate
    6/1/1993 12:00:00 AM
  • Firstpage
    678
  • Lastpage
    685
  • Abstract
    This study demonstrates the circuit and device conditions under which self-heating can significantly affect bipolar junction transistor (BJT) circuit behavior. Simple quantitative measures are supplied that allow estimation of thermally induced errors in BJT small-signal parameters, based on knowledge of the transistor geometry and its Early voltage. It is shown that errors in output admittance and reverse transadmittance can be significant without much power dissipation, especially when the base and emitter driving impedances are small. Other small-signal parameters are less affected unless the power dissipation becomes significant. Thermal effects in large-signal DC analysis can be significant in precision analog circuits that depend on close transistor matching; such circuits can also exhibit long settling-time tails due to long thermal time constants. ECL (emitter-coupled logic) delay is shown to be insensitive to self-heating. These effects are demonstrated through simulations of a variety of circuits using versions of SPICE modified to include physics-based models for thermal impedance
  • Keywords
    bipolar transistor circuits; bipolar transistors; semiconductor device models; thermal analysis; transient response; BJT self-heating; BJT small-signal parameters; ECL delay; Early voltage; SPICE; bipolar junction transistor; circuit behavior; device conditions; emitter-coupled logic; large signal thermal effects; large-signal DC analysis; output admittance; physics-based models; power dissipation; reverse transadmittance; simulations; thermal impedance; thermally induced errors; transistor geometry; Admittance; Analog circuits; Bipolar transistor circuits; Delay; Geometry; Impedance; Logic; Power dissipation; Probability distribution; Voltage;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/4.217983
  • Filename
    217983