Title :
Spectral responses of GaAs photodiodes fabricated by rapid thermal diffusion
Author :
Usami, Akira ; Kitagawa, Akio ; Wada, Takao ; Suzuki, Masakuni ; Tokuda, Yutaka ; Kan, Hirofumi
Author_Institution :
Dept. of Electr. & Comput. Eng., Nagoya Inst. of Technol., Japan
Abstract :
The spectral responses of GaAs photodiodes fabricated by rapid thermal diffusion (RTD) of Zn are presented. The authors tried controlling the p/sup +/-n junction depth by the heating rate of RTD, without extending the diffusion time. It is found that Zn diffuses from the surface to a deeper position as the heating rate increases. Consequently, the spectral response of photodiodes formed by RTD is strongly dependent on the heating rate of RTD. A large improvement in the short-wavelength response between 400 and 800 nm is observed as the heating rate decreases.<>
Keywords :
III-V semiconductors; doping profiles; gallium arsenide; photodiodes; semiconductor doping; zinc; 400 to 800 nm; GaAs; GaAs:Zn; diffusion time; doping profiles; heating rate; junction depth; photodiodes; rapid thermal diffusion; semiconductors; short-wavelength response; spectral response; Furnaces; Gallium arsenide; Heating; Lamps; Optical device fabrication; Optoelectronic devices; Photodiodes; Temperature control; Thermal degradation; Zinc;
Journal_Title :
Electron Device Letters, IEEE
