Title :
Piezoelectric effect in CdSe field-effect transistors
Author :
Jacobs, J.E. ; Reimann, K.J.
Abstract :
The strain-induced variation of the CdSe TFT characteristics was measured. The experimental and theoretical values of the generated piezoelectric voltage agree within 25 percent. The strain sensitivity of the fabricated devices was in the order of 8000 volts per unit strain.
Keywords :
Aluminum; Capacitive sensors; Electrodes; FETs; Insulation; Piezoelectric effect; Piezoelectric films; Thin film transistors; Vacuum breakdown; Voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1970.7596
