DocumentCode
910266
Title
A self-scanned image sensor employing MOS structure
Author
Ando, Takehiro ; Ishihara, Yoshiyuki ; Akahoshi, Tomoyuki
Volume
58
Issue
2
fYear
1970
Firstpage
247
Lastpage
248
Abstract
Studies were carried out on a self-scanned image sensor comprising a linear integrated-circuit array of photodiodes and metal-oxide-semiconductor (MOS) transistors. It was found that the maximum scanning rate is about 2.5×105bits/s, and that the value is mainly restricted by the photo-induced current and the junction capacitance of the photodiode.
Keywords
Capacitance; Delay; Equivalent circuits; Image sensors; Optical devices; Optical sensors; Photodiodes; Sensor arrays; Solid state circuits; Threshold voltage;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1970.7597
Filename
1449527
Link To Document