• DocumentCode
    910266
  • Title

    A self-scanned image sensor employing MOS structure

  • Author

    Ando, Takehiro ; Ishihara, Yoshiyuki ; Akahoshi, Tomoyuki

  • Volume
    58
  • Issue
    2
  • fYear
    1970
  • Firstpage
    247
  • Lastpage
    248
  • Abstract
    Studies were carried out on a self-scanned image sensor comprising a linear integrated-circuit array of photodiodes and metal-oxide-semiconductor (MOS) transistors. It was found that the maximum scanning rate is about 2.5×105bits/s, and that the value is mainly restricted by the photo-induced current and the junction capacitance of the photodiode.
  • Keywords
    Capacitance; Delay; Equivalent circuits; Image sensors; Optical devices; Optical sensors; Photodiodes; Sensor arrays; Solid state circuits; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1970.7597
  • Filename
    1449527