DocumentCode
910319
Title
Dual-mode behavior of silicon heterostructure switches with third-terminal control
Author
Ali, N.T. ; Green, Roger J.
Author_Institution
EIMC Unit, Bradford Univ., UK
Volume
42
Issue
10
fYear
1995
fDate
10/1/1995 12:00:00 AM
Firstpage
1798
Lastpage
1805
Abstract
The performance of three-terminal silicon heterostructure switches is examined. Different types of third terminal injection are considered. The device is seen to operate in both avalanche and punch-through modes under particular circumstances. The criterion for punch-through operation is developed.
Keywords
avalanche diodes; elemental semiconductors; semiconductor heterojunctions; semiconductor switches; silicon; Si; avalanche mode; dual-mode behavior; heterostructure switches; punch-through mode; third-terminal control; three-terminal switches; Charge carrier density; Charge carrier processes; Current density; Doping; Electrons; Permittivity; Silicon; Switches; Temperature; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.464416
Filename
464416
Link To Document