Test of McWhorter´s model of low-frequency noise in Si m.o.s.t.s

A quantitative test of McWhorter´s model is described. It is based on measurements of the equivalent noise voltage and trapping efficiency of surface states. The results indicate that McWhorter´s mechanism is probably dominant over a large range of gate voltages for some m.o.s.t.s and up to a few volts above threshold for others. In the latter case, some other mechanism is dominant for large voltages.