DocumentCode
910551
Title
CW silicon TRAPATT operation
Author
Evans, W.J. ; Iglesias, D.E.
Volume
58
Issue
2
fYear
1970
Firstpage
285
Lastpage
286
Abstract
Silicon IMPATT diodes operating in the TRAPATT mode have generated more than 6 watts of CW power with an efficiency of 26 percent. The oscillator circuit used in the experiment is similar to that used for the CW germanium TRAPATT oscillations reported earlier and operates at a frequency of 520 MHz. The diode heat sink is cooled with liquid nitrogen.
Keywords
Admittance; Computer networks; Diodes; Frequency; Germanium; Poles and zeros; Silicon; Testing; Transfer functions; Yttrium;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1970.7625
Filename
1449555
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