Hydrogenated amorphous silicon thin-film transistor on plastic with an organic gate insulator

Author

Won, Sung Hwan ; Hur, Ji Ho ; Lee, Chang Bin ; Nam, Hyun Chul ; Chung, Jang Kyun ; Jang, Jin

Author_Institution

Dept. of Inf. Display, Kyung Hee Univ., Seoul, South Korea

Volume

25

Issue

3

fYear

2004

fDate

3/1/2004 12:00:00 AM

Firstpage

132

Lastpage

134

Abstract

We developed a high-performance, hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) on plastic substrate using an organic gate insulator. The TFT with a silicon-nitride (SiN_x) gate insulator exhibited a field-effect mobility of 0.3 cm²/Vs and a threshold voltage of 5 V. On the other hand, an a-Si:H TFT with an organic gate insulator of BCB (benzocyclobutene) has a field-effect mobility of 0.4 cm²/Vs and a threshold voltage of 0.7 V. The leakage currents through the gate insulator of an a-Si:H TFT with an organic gate insulator is about two orders of magnitude lower than that of an a-Si:H TFT with a SiN_x gate insulator.

Keywords

amorphous semiconductors; electron mobility; elemental semiconductors; field effect transistors; hydrogen; leakage currents; silicon; substrates; thin film transistors; 0.7 V; 5 V; Si:H; SiN; a-Si:H TFT; benzocyclobutene; field-effect mobility; hydrogenated amorphous silicon; leakage currents; organic gate insulator; plastic substrate; silicon-nitride gate insulator; thin-film transistor; threshold voltage; Amorphous silicon; Fabrication; Plasma temperature; Plastic films; Plastic insulation; Silicon compounds; Substrates; Thermal stresses; Thin film transistors; Threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2003.817368

Filename

1269900