Title :
Self-aligned n-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric and tungsten gate
Author :
Shang, Huiling ; Lee, Kam-Leung ; Kozlowski, P. ; D´Emic, C. ; Babich, I. ; Sikorski, E. ; Ieong, Meikei ; Wong, H.-S.P. ; Guarini, Kathryn ; Haensch, W.
Author_Institution :
Semicond. R&D Center, IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
fDate :
3/1/2004 12:00:00 AM
Abstract :
In this letter, we report self-aligned n-channel germanium (Ge) MOSFETs with a thin Ge oxynitride gate dielectric and tungsten gate electrode. Excellent off-state current is achieved through the reduction of junction leakage. For the first time, we have demonstrated an n-channel Ge MOSFET with a subthreshold slope of 150 mV/dec and an on-off current ratio of ∼104.
Keywords :
MIS structures; MOSFET; dielectric properties; germanium compounds; leakage currents; semiconductor junctions; tungsten compounds; Ge; junction leakage reduction; off-state current; self-aligned n-channel germanium MOSFETs; subthreshold slope; thin germanium oxynitride gate dielectric; tungsten gate electrode; Dielectric devices; Dielectric losses; Fabrication; Germanium; Leakage current; MOSFETs; Rapid thermal annealing; Semiconductor diodes; Temperature; Tungsten;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2003.823060
