Fully depleted strained-SOI n- and p-MOSFETs on bonded SGOI substrates and study of the SiGe/BOX interface

Author

Cheng, Zhiyuan ; Pitera, Arthur J. ; Lee, Minjoo L. ; Jung, Jongwan ; HOyt, Judy L. ; Antoniadis, Dimitri A. ; Fitzgerald, Eugene A.

Author_Institution

Microsystem Technol. Labs., Massachusetts Inst. of Technol., Cambridge, MA, USA

Volume

25

Issue

3

fYear

2004

fDate

3/1/2004 12:00:00 AM

Firstpage

147

Lastpage

149

Abstract

Fully depleted strained-Si n- and p-MOSFETs have been demonstrated on bonded-SiGe-on-insulator (SGOI) substrates. The fully depleted devices show significant electron and hole mobility enhancements of 60 and 35%, respectively, demonstrating that high material quality, thin SGOI substrates can be fabricated by a wafer bonding approach. The bottom SiGe/buried-oxide interface in the SGOI structure and its impact on fully depleted device performance are also investigated.

Keywords

Ge-Si alloys; MOSFET; electron mobility; elemental semiconductors; hole mobility; interface states; silicon-on-insulator; BOX interface; bonded SGOI substrates; bonded-SiGe-on-insulator; device performance; electron mobility; fully depleted strained-SOI; hole mobility; n-MOSFETs; p-MOSFETs; wafer bonding; Charge carrier processes; Germanium silicon alloys; Insulation; Laboratories; MOSFET circuits; Oxidation; Semiconductor materials; Silicon germanium; Substrates; Wafer bonding;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2003.823057

Filename

1269905