Title :
Theory of the thin-oxide m.n.o.s. memory transistor
Author :
Svensson, Christer ; Lundstr¿¿m, I.
Author_Institution :
Chalmers University of Technology, Research Laboratories of Electronics III, Gothenburg, Sweden
Abstract :
A general model for the transient behaviour of m.i.s. memory transistors is presented. The model is applied to a practical memory transistor which has an insulator layer consisting of 500¿1000 Å silicon nitride on 15¿25 Å silicon dioxide. The properties of this device are calculated and are shown to agree with experimental data.
Keywords :
metal-insulator-semiconductor devices; semiconductor device models; semiconductor storage devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19700447
