Title :
Revised method for extraction of the thermal resistance applied to bulk and SOI SiGe HBTs
Author :
Vanhoucke, T. ; Boots, H.M.J. ; van Noort, W.D.
Author_Institution :
Philips Res. Leuven, Belgium
fDate :
3/1/2004 12:00:00 AM
Abstract :
A revision is presented of the technique to determine the junction temperature and thermal resistance of bipolar transistors. It is based on the temperature sensitivity of the base-emitter voltage when biasing the device under constant emitter current. It accounts correctly for the self-heating of the device during the measurement. Results are obtained for devices fabricated on silicon-on-insulator (SOI) and bulk silicon having different emitter widths and lengths. An increment of the thermal resistance is found for SOI devices with respect to bulk.
Keywords :
heterojunction bipolar transistors; silicon-on-insulator; thermal resistance measurement; SOI HBTs; SiGe; base-emitter voltage; bipolar transistors; bulk HBTs; bulk silicon; emitter current; junction temperature; self-heating; silicon-on-insulator; temperature sensitivity; thermal resistance extraction; Current measurement; Electrical resistance measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Silicon germanium; Silicon on insulator technology; Temperature dependence; Temperature sensors; Thermal resistance; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.824242
