• DocumentCode
    910740
  • Title

    Negative differential output conductance of self heated power MOSFETs

  • Author

    Barlow, P.S. ; Davis, R.G. ; Lazarus, M.J.

  • Author_Institution
    University of Lancaster, Department of Physics, Lancaster, UK
  • Volume
    133
  • Issue
    5
  • fYear
    1986
  • fDate
    10/1/1986 12:00:00 AM
  • Firstpage
    177
  • Lastpage
    179
  • Abstract
    Pulsed and continuous operational curves for MOS power transistors are compared. The latter show pronounced negative differential output conductance of the drain, which is explained in terms of a mathematical model. The potential hazards of this phenomenon are discussed.
  • Keywords
    insulated gate field effect transistors; negative resistance; power transistors; semiconductor device models; continuous operational curves; mathematical model; negative differential output conductance; power MOSFETs; pulsed operational curves;
  • fLanguage
    English
  • Journal_Title
    Solid-State and Electron Devices, IEE Proceedings I
  • Publisher
    iet
  • ISSN
    0143-7100
  • Type

    jour

  • DOI
    10.1049/ip-i-1.1986.0036
  • Filename
    4644200