Isolated AI-SiN-(p)Si-(n)Si MISS device

Author

Chang, C.Y. ; Fang, B.C. ; Wang, Y.D. ; Tzeng, F.C.

Author_Institution

National Cheng Kung University, Institute of Electrical and Computer Engineering, Semiconductor and System Laboratories, Tainan, Republic of China

Volume

133

Issue

5

fYear

1986

fDate

10/1/1986 12:00:00 AM

Firstpage

189

Lastpage

192

Abstract

A new MISS switching device structure was designed and fabricated, which consists of Al/thin thermal nitride/pn+ (buried)-p-Si layers and is isolated by diffusing n-well to the buried n-layer. Furthermore, a n+-shield ring which confines the carrier flow to the MIS interface and a p+-injector which injects carriers from p to n layers were successfully implemented. The device reveals that switching and holding voltages (Vs and VH) decrease with increasing area of the MIS junction Aj and with decreasing np-junction area Aj and thin dielectric thickness di, respectively. The holding and switching currents (IHand Is) increase with increasing AJ/Ai but decrease with increasing dielectric thickness di. The fringing effect is minimised due to the confined structure.

Keywords

aluminium; elemental semiconductors; metal-insulator-semiconductor devices; silicon; silicon compounds; switching; Al-SiN-Si; Al/SiN/p-Si/n-Si; MIS junction; MISS switching device; metal-insulator-semiconductor structure; n+-shield ring; n-type; p+-injector; p-type;

fLanguage

English

Journal_Title

Solid-State and Electron Devices, IEE Proceedings I

Publisher

iet

ISSN

0143-7100

Type

jour

DOI

10.1049/ip-i-1.1986.0040

Filename

4644213