DocumentCode
910985
Title
Characteristics of the epitaxial semiconductor raman laser
Author
Suto, K. ; Nishizawa, J.
Author_Institution
Research Institute of Electrical Communication, Tohoku University, Sendai, Japan
Volume
133
Issue
4
fYear
1986
fDate
8/1/1986 12:00:00 AM
Firstpage
259
Lastpage
263
Abstract
An epitaxial semiconductor Raman laser with a directly reflection coated resonator structure instead of external mirrors is reported. Also, the modulation of a semiconductor Raman laser by carrier injection from the pn-junction formed on the active layer, and the amplifying experiment of the Raman laser are reported.
Keywords
III-V semiconductors; Raman lasers; gallium compounds; laser cavity resonators; liquid phase epitaxial growth; optical modulation; semiconductor growth; solid lasers; GaP crystal; III-V semiconductors; carrier injection; directly reflection coated resonator structure; epitaxial semiconductor Raman laser; liquid phase epitaxy; modulation; pn-junction;
fLanguage
English
Journal_Title
Optoelectronics, IEE Proceedings J
Publisher
iet
ISSN
0267-3932
Type
jour
DOI
10.1049/ip-j.1986.0042
Filename
4644223
Link To Document