• DocumentCode
    911075
  • Title

    Accurate bias dependent linear model for bipolar transistors up to 6 GHz

  • Author

    Kumar, K. Bharath ; Krishnapur, R. ; Mondal, T.B.

  • Author_Institution
    Indian Institute of Technology, Kharagpur, India
  • Volume
    133
  • Issue
    6
  • fYear
    1986
  • fDate
    12/1/1986 12:00:00 AM
  • Firstpage
    214
  • Lastpage
    220
  • Abstract
    A multilump linear model giving good agreement between measured and simulated 2-port parameters in the frequency range 0.5¿6 GHz and collector currents up to 20 mA is given. The collector current dependence of intrinsic elements of the model is determined.
  • Keywords
    bipolar transistors; semiconductor device models; solid-state microwave devices; 0.5 to 6 GHz; 2-port parameters; 20 mA; bias dependent linear model; bipolar transistors; collector currents; multilump linear model;
  • fLanguage
    English
  • Journal_Title
    Solid-State and Electron Devices, IEE Proceedings I
  • Publisher
    iet
  • ISSN
    0143-7100
  • Type

    jour

  • DOI
    10.1049/ip-i-1.1986.0045
  • Filename
    4644230
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=911075