Title :
High-efficiency avalanche-diode oscillators and amplifiers in X-band
Author :
Gibbons, G. ; Grace, M.I.
fDate :
3/1/1970 12:00:00 AM
Abstract :
High-efficiency pulsed microwave amplification and oscillation have been obtained at X-band using punch-through silicon p-n junction diodes mounted in a ridged waveguide. Peak powers of 20 W at 30 percent efficiency were measured at 8.6 GHz.
Keywords :
Atomic layer deposition; Atomic measurements; Breakdown voltage; Circuits; Coaxial components; Frequency; Impurities; Light emitting diodes; Oscillators; Pulse amplifiers;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1970.7683
