DocumentCode
911168
Title
High-efficiency avalanche-diode oscillators and amplifiers in X-band
Author
Gibbons, G. ; Grace, M.I.
Volume
58
Issue
3
fYear
1970
fDate
3/1/1970 12:00:00 AM
Firstpage
512
Lastpage
513
Abstract
High-efficiency pulsed microwave amplification and oscillation have been obtained at X-band using punch-through silicon p-n junction diodes mounted in a ridged waveguide. Peak powers of 20 W at 30 percent efficiency were measured at 8.6 GHz.
Keywords
Atomic layer deposition; Atomic measurements; Breakdown voltage; Circuits; Coaxial components; Frequency; Impurities; Light emitting diodes; Oscillators; Pulse amplifiers;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1970.7683
Filename
1449613
Link To Document