DocumentCode :
911285
Title :
FEN filter design using tantalum and silicon integrated circuits
Author :
Moschytz, George S.
Author_Institution :
Bell Telephone Laboratories, Incorporated, Holmdel, N. J.
Volume :
58
Issue :
4
fYear :
1970
fDate :
4/1/1970 12:00:00 AM
Firstpage :
550
Lastpage :
566
Abstract :
An economical approach to integrated active RC filter design is described. Complex filter networks are broken down into a series of cascadable second-order filter sections consisting of tantalum thin-film RC networks and semiconductor integrated operational amplifiers. Two building blocks are available for any desired frequency within a decade and for any desired filter function (e.g., low-pass, high-pass, band-pass, band-reject, all-pass, etc.). One building block is for low Q realizations and contains one amplifier; the other is for high Q realizations and contains two. The considerable versatility of this approach is obtained by 1) a network synthesis approach based on decomposing a given second-order function into a low Q asymptotic approximation of this function in cascade with an active frequency emphasizing network and 2) by the characteristics of tantalum and silicon integrated circuits.
Keywords :
Active filters; Band pass filters; Frequency; Low pass filters; Network synthesis; Operational amplifiers; Semiconductor optical amplifiers; Semiconductor thin films; Silicon; Thin film circuits;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1970.7694
Filename :
1449624
Link To Document :
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