DocumentCode
911387
Title
Numerical method of investigation for m.o.s.t. structures
Author
Heydemann, M.
Author_Institution
CEA-Centre d´Ã\x89tudes de Bruyÿres-le-Châtel, Montrouge, France
Volume
6
Issue
23
fYear
1970
Firstpage
735
Lastpage
737
Abstract
A numerical method of investigation for m.o.s. structures, which includes the complete system of equations governing the device, is presented with some results for a particular m.o.s. transistor.
Keywords
field effect transistors; metal-insulator-semiconductor devices; metal-insulator-semiconductor structures;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19700510
Filename
4235016
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