• DocumentCode
    911404
  • Title

    Static large-signal field-effect transistor models

  • Author

    Wedlock, B.D.

  • Volume
    58
  • Issue
    4
  • fYear
    1970
  • fDate
    4/1/1970 12:00:00 AM
  • Firstpage
    593
  • Lastpage
    595
  • Abstract
    A series of static large-signal field-effect transistor (FET) models are presented which consist of familiar circuit building blocks plus a new nonlinear element, the ideal field-effect diode. The models present a unified form for all types of FET´s, and generate the complete set of static FET characteristics, including inverted operation.
  • Keywords
    Equations; FETs; Gain; Laser beams; Manufacturing; Optical pulses; Phosphors; Pulse measurements; Signal to noise ratio; Steady-state;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1970.7703
  • Filename
    1449633
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=911404