Annealing behaviour of proton-irradiated m.o.s. capacitors

Radiation-induced charges in m.o.s. capacitors irradiated by protons can be effectively annealed out at a temperature of 300°C. An activation-energy analysis of the isochronal annealing results shows that the potential barrier created by the radiation-induced space charges in the oxide layer has an energy distribution ranging from 0.5 to 1.1 eV above the conduction band edge of silicon.