Application of insulated gate bipolar transistor to zero-current switching converters

Author

Rangan, R. ; Chen, Dan Y. ; Yang, Jian ; Lee, John

Author_Institution

Converter Concept, Pardeeville, WI, USA

Volume

4

Issue

1

fYear

1989

fDate

1/1/1989 12:00:00 AM

Firstpage

2

Lastpage

7

Abstract

The problems associated with insulated-gate bipolar transistor (IGBT) devices in PWM converters, such as turn-off current tailing and turn-off latching, are largely avoided in zero-current switching resonant converters. Phenomena induced by dv/dt, such as the power losses and latching, are identified as the predominant problems in using IGBT devices for very-high-frequency resonant operations. The discussion and the verification of the results presented are focused on buck-type converters in the zero-current switching family

Keywords

bipolar transistors; insulated gate field effect transistors; power convertors; power transistors; switching circuits; IGBT; PWM converters; buck-type converters; insulated gate bipolar transistor; power losses; resonant converters; turn-off current tailing; turn-off latching; very-high-frequency resonant operations; zero-current switching converters; Electromagnetic interference; Insulated gate bipolar transistors; Pulse width modulation; Pulse width modulation converters; Resonance; Space vector pulse width modulation; Switches; Switching converters; Voltage; Zero current switching;

fLanguage

English

Journal_Title

Power Electronics, IEEE Transactions on

Publisher

ieee

ISSN

0885-8993

Type

jour

DOI

10.1109/63.21867

Filename

21867