Title :
Alpha particle induced soft errors in NMOS RAMS: a review
Author :
Carter, P.M. ; Wilkins, B.R.
Author_Institution :
University of Southampton, Department of Electronics and Computer Science, Southampton, UK
fDate :
2/1/1987 12:00:00 AM
Abstract :
The paper aims to explain the alpha particle induced soft error phenomenon using the NMOS dynamic random access memory (RAM) as a model. It discusses some of the many techniques experimented with by manufacturers to overcome the problem, and gives a review of the literature covering most aspects of soft errors in dynamic RAMs. Finally, the soft error performance of current dynamic RAM and static RAM products from several manufacturers are compared.
Keywords :
alpha-particle effects; errors; field effect integrated circuits; integrated memory circuits; random-access storage; reviews; DRAM; NMOS RAMs; alpha particle induced soft error; dynamic random access memory; review;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
DOI :
10.1049/ip-i-1.1987.0005
