Silicon Radiation Detectors with Oxide Charge State Compensation

This paper discusses the use of boron implantation on high resistivity P type silicon before oxide growth to compensate for the presence of charge states in the oxide and oxide/silicon interface. The presence of these charge states on high resistivity P type silicon produces an inversion layer which causes high leakage currents on N+P junctions and high surface conductance. Compensating the surface region by boron implantation is shown to result in oxide passivated N+P junctions with very low leakage currents and with low surface conductance.