• DocumentCode
    911659
  • Title

    Travelling-wave amplifier using thin epitaxial GaAs layer

  • Author

    Dean, Robert H. ; Dreeben, A.B. ; Kaminski, J.F. ; Triano, Alex

  • Author_Institution
    RCA Laboratories, Princeton, USA
  • Volume
    6
  • Issue
    24
  • fYear
    1970
  • Firstpage
    775
  • Lastpage
    776
  • Abstract
    A solid-state travelling-wave amplifier has been fabricated in 1 ¿m n type epitaxial GaAs on a semi-insulating substrate. It shows a net gain around 5, 7.5, 9 and 11.5 GHz, with a maximum value of 13 dB at 11.5 GHz. Other features include c.w. operation, 20¿30 dB isolation, and voltage-controlled phase shifting with constant gain.
  • Keywords
    microwave amplifiers; semiconductor thin films; space charge;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19700537
  • Filename
    4235044
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=911659