• DocumentCode
    911672
  • Title

    Optical bistability in semiconductor injection lasers

  • Author

    McLnerney, J.G. ; Heffernan, D.M. ; Heffernan, D.M.

  • Author_Institution
    University of New Mexico, Center for High Technology Materials, Albuquerque, USA
  • Volume
    134
  • Issue
    1
  • fYear
    1987
  • fDate
    2/1/1987 12:00:00 AM
  • Firstpage
    41
  • Lastpage
    50
  • Abstract
    This paper reviews optical bistability in semiconductor lasers, with particular reference to the potential switching speeds of the systems demonstrated to date. Devices which switch by redistributing a nearly constant number of carriers within the active region should be faster, although less stable, than systems whose transitions are attended by large changes in carrier numbers. One system of the former type, the self-focused coupled cavity laser, is analysed in some detail and is compared with the twin-stripe laser and the Fabry-Perot laser amplifier.
  • Keywords
    laser cavity resonators; optical bistability; reviews; semiconductor junction lasers; active region; carrier numbers; self-focused coupled cavity laser; semiconductor injection lasers; switching speeds;
  • fLanguage
    English
  • Journal_Title
    Optoelectronics, IEE Proceedings J
  • Publisher
    iet
  • ISSN
    0267-3932
  • Type

    jour

  • DOI
    10.1049/ip-j.1987.0009
  • Filename
    4644302