DocumentCode
911672
Title
Optical bistability in semiconductor injection lasers
Author
McLnerney, J.G. ; Heffernan, D.M. ; Heffernan, D.M.
Author_Institution
University of New Mexico, Center for High Technology Materials, Albuquerque, USA
Volume
134
Issue
1
fYear
1987
fDate
2/1/1987 12:00:00 AM
Firstpage
41
Lastpage
50
Abstract
This paper reviews optical bistability in semiconductor lasers, with particular reference to the potential switching speeds of the systems demonstrated to date. Devices which switch by redistributing a nearly constant number of carriers within the active region should be faster, although less stable, than systems whose transitions are attended by large changes in carrier numbers. One system of the former type, the self-focused coupled cavity laser, is analysed in some detail and is compared with the twin-stripe laser and the Fabry-Perot laser amplifier.
Keywords
laser cavity resonators; optical bistability; reviews; semiconductor junction lasers; active region; carrier numbers; self-focused coupled cavity laser; semiconductor injection lasers; switching speeds;
fLanguage
English
Journal_Title
Optoelectronics, IEE Proceedings J
Publisher
iet
ISSN
0267-3932
Type
jour
DOI
10.1049/ip-j.1987.0009
Filename
4644302
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