Title :
Measurement of transverse spreading velocity of a high-field domain in a 3-terminal Gunn device
Author :
Kawashima, Mitsumasa ; Kataoka, S.
Author_Institution :
Ministry of International Trade & Industry, Electrotechnical Laboratory, Tokyo, Japan
Abstract :
Measurements were made for a transverse spreading velocity of a high-field domain in a 3-terminal GaAs Gunn device. The result shows that the velocity is higher than 109 cm/s. This suggests that the high-field region spreads transversely with the speed of electromagnetic waves in a negative-conductivity material.
Keywords :
Gunn devices; Gunn effect; domains; semiconductor devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19700542
