DocumentCode :
911752
Title :
Junction-gate FET RF power amplifier
Author :
Ringel, M.
Volume :
58
Issue :
5
fYear :
1970
fDate :
5/1/1970 12:00:00 AM
Firstpage :
789
Lastpage :
790
Abstract :
A junction-gate power field-effect transistor of recent design has been found to yield greater than 25 watts CW at 30 MHz in two modes of circuit configuration. In this investigation, favorable characteristics are explored for potential device utility as a high-reliability low-distortion RF power amplifier.
Keywords :
Circuit testing; Degradation; FETs; Feedback circuits; High power amplifiers; Impedance; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1970.7733
Filename :
1449663
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=911752
بازگشت