DocumentCode
911752
Title
Junction-gate FET RF power amplifier
Author
Ringel, M.
Volume
58
Issue
5
fYear
1970
fDate
5/1/1970 12:00:00 AM
Firstpage
789
Lastpage
790
Abstract
A junction-gate power field-effect transistor of recent design has been found to yield greater than 25 watts CW at 30 MHz in two modes of circuit configuration. In this investigation, favorable characteristics are explored for potential device utility as a high-reliability low-distortion RF power amplifier.
Keywords
Circuit testing; Degradation; FETs; Feedback circuits; High power amplifiers; Impedance; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Voltage;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1970.7733
Filename
1449663
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