• DocumentCode
    911834
  • Title

    Radiation Hardness and Annealing Tests of a Custom VLSI Device

  • Author

    Breakstone, Alan ; Parker, Sherwood ; Adolphsen, Chris ; Litke, Alan ; Schwarz, Andreas ; Turala, Michal ; Lüth, Vera

  • Author_Institution
    University of Hawaii, Honolulu, HI 96822
  • Volume
    34
  • Issue
    1
  • fYear
    1987
  • Firstpage
    491
  • Lastpage
    494
  • Abstract
    Several NMOS custom VLSI ("Microplex") circuits have been irradiated with a 500 rad/hr 60Co source. With power off three of four chips tested have survived doses exceeding 1 Mrad. With power on at a 25% duty cycle, all chips tested failed at doses ranging from 10 to 130 krad. Annealing at 200°C was only partially successful in restoring the chips to useful operating conditions.
  • Keywords
    Annealing; Circuit testing; Detectors; Linear accelerators; MOS devices; Silicon; Strips; Temperature; Very large scale integration; Voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1987.4337391
  • Filename
    4337391
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=911834