• DocumentCode
    911841
  • Title

    A capacitance mapping technique for investigation of localized recombination-generation sites in Si-SiO2interfaces

  • Author

    Goetzberger, A. ; Klausmann, E.

  • Volume
    58
  • Issue
    5
  • fYear
    1970
  • fDate
    5/1/1970 12:00:00 AM
  • Firstpage
    799
  • Lastpage
    800
  • Abstract
    Current generation sources in Si-SiO2interfaces are studied by capacitance mapping. For this purpose, a nonequilibrium steady-state condition is created by applying an ac pump signal to one of many test capacitors on an oxide island.
  • Keywords
    Capacitance measurement; Circuits; Frequency; MOS capacitors; Probes; Radiative recombination; Silicon; Steady-state; Surface discharges; Symmetric matrices;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1970.7743
  • Filename
    1449673
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=911841