Effects of device parameters on domain dynamics in bulk GaAs
Author :
Robrock, R.B., II
Volume :
58
Issue :
5
fYear :
1970
fDate :
5/1/1970 12:00:00 AM
Firstpage :
804
Lastpage :
805
Abstract :
With the aid of a lumped bulk device model, a new expression is developed for domain growth rate in uniform samples of n-GaAs. The effects of device length and donor density on domain dynamics are subsequently considered.
