Title :
Model for programming window degradation in FLOTOX EEPROM cells
Author :
Papadas, C. ; Ghibaudo, Gerard ; Pananakakis, G. ; Riva, C. ; Ghezzi, P.
Author_Institution :
Lab. de Phys. des Composants a Semicond., Grenoble, France
Abstract :
A theoretical model that explains the programming window degradation and the corresponding high- and low-state threshold voltage shifts as a function of the number of write-erase operations in FLOTOX EEPROM cells is proposed. The collapse of the programming window is quantitatively related to the oxide charge buildup in the FLOTOX tunnel region as the cycling of the memory cell is increased. The simplicity of the model should make possible a direct application at CAD level.<>
Keywords :
EPROM; PLD programming; equivalent circuits; integrated memory circuits; semiconductor device models; CAD application; EEPROM cells; FLOTOX; memory cell cycling; oxide charge buildup; programming window degradation; theoretical model; threshold voltage shifts; tunnel region; write-erase operations; Capacitance; Capacitors; Degradation; EPROM; Electrodes; Equivalent circuits; Functional programming; Nonvolatile memory; Threshold voltage; Voltage control;
Journal_Title :
Electron Device Letters, IEEE
