DocumentCode
911942
Title
A Description of MOS Internodal Capacitances for Transient Simulations
Author
Taylor, G.W. ; Fichtner, Wolfgang ; Simmons, J.G.
Author_Institution
Bell Laboratories, Murray Hill, NJ, USA
Volume
1
Issue
4
fYear
1982
fDate
10/1/1982 12:00:00 AM
Firstpage
150
Lastpage
156
Abstract
Charge versus voltage and internodal capacitance versus voltage characteristics are calculated for a short-channel MOSFET using a unified model of the dc device behavior. Velocity saturation is an important feature in the results. The importance of charge and capacitance calculations is assessed using a high speed MOS transient simulation. Device current and gate charge are determined to be the important ingredients for accurate simulation.
Keywords
Capacitance; Capacitance-voltage characteristics; Circuit analysis computing; Circuit simulation; Computational modeling; Electric resistance; Electron mobility; Electrostatics; MOSFET circuits; Threshold voltage;
fLanguage
English
Journal_Title
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher
ieee
ISSN
0278-0070
Type
jour
DOI
10.1109/TCAD.1982.1270005
Filename
1270005
Link To Document