Title :
A Description of MOS Internodal Capacitances for Transient Simulations
Author :
Taylor, G.W. ; Fichtner, Wolfgang ; Simmons, J.G.
Author_Institution :
Bell Laboratories, Murray Hill, NJ, USA
fDate :
10/1/1982 12:00:00 AM
Abstract :
Charge versus voltage and internodal capacitance versus voltage characteristics are calculated for a short-channel MOSFET using a unified model of the dc device behavior. Velocity saturation is an important feature in the results. The importance of charge and capacitance calculations is assessed using a high speed MOS transient simulation. Device current and gate charge are determined to be the important ingredients for accurate simulation.
Keywords :
Capacitance; Capacitance-voltage characteristics; Circuit analysis computing; Circuit simulation; Computational modeling; Electric resistance; Electron mobility; Electrostatics; MOSFET circuits; Threshold voltage;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
DOI :
10.1109/TCAD.1982.1270005
