DocumentCode
911980
Title
Long-term charge storage in GaP pn junction capacitors
Author
Wang, Yannan ; Ramdani, J. ; He, Yuhong ; Bedair, S.M. ; Melloch, M.R.
Author_Institution
Purdue Univ., West Lafayette, IN, USA
Volume
29
Issue
13
fYear
1993
fDate
6/24/1993 12:00:00 AM
Firstpage
1154
Lastpage
1156
Abstract
pn junction storage capacitors are fabricated in GaP grown by gas source MBE. Storage times are thermally activated with activation energies between 1.10 and 1.38 eV. At 125 degrees C, the GaP recovery times are approximately 50 times longer than the best GaAs devices.
Keywords
III-V semiconductors; capacitors; gallium compounds; molecular beam epitaxial growth; p-n homojunctions; semiconductor devices; semiconductor storage; 125 degC; GaP; activation energies; gas source MBE; long-term charge storage; memory cells; n-p-n type; p-n-p type; pn junction capacitors; recovery times; storage capacitors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19930772
Filename
219237
Link To Document