مرکز منطقه ای اطلاع رساني علوم و فناوري - MESFET-like transferred-electron devices in In<sub>0.53</sub>Ga<sub>0.47</sub>As

DocumentCode :

912015

Title :

MESFET-like transferred-electron devices in In_0.53Ga_0.47As

Author :

Hahn, David ; Zwinge, G. ; Schlachetzki, A.

Author_Institution :

Tech. Univ. Braunschweig, Germany

Volume :

Issue :

fYear :

1993

fDate :

6/24/1993 12:00:00 AM

Firstpage :

1160

Lastpage :

1162

Abstract :

In_0.53Ga_0.47As transferred-electron devices with Schottky-gate electrodes were fabricated. These devices can be used in optoelectronic circuits on InP or as millimetre wave oscillators. For the realisation of the gate electrode several enhancement layers were tested to increase the Schottky barrier height on In_0.53Ga_0.47As. The triggering of single dipole domains in the device was demonstrated.

Keywords :

Gunn devices; Schottky effect; gallium arsenide; indium compounds; integrated optoelectronics; solid-state microwave devices; In_0.53Ga_0.47As; InP; InP substrates; MESFET-like device; MM-wave device; Schottky barrier height; Schottky-gate electrodes; TED; millimetre wave oscillators; optoelectronic circuits; single dipole domains; transferred-electron devices;

fLanguage :

English

Journal_Title :

Electronics Letters

Publisher :

iet

ISSN :

0013-5194

Type :

jour

DOI :

10.1049/el:19930776

Filename :

219242

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=912015