Bulk unipolar transistors in the limit of nonpunch-through

The paper describes quantitatively a new, unified model for the homoj unction narrowbase bulk unipolar transistors. With the effects of minority-carrier changes and currents included, the analysis can define the limits between the p-plane barrier transistor, the triangular barrier transistor and the camel transistor. It is also possible to use this unified analysis to account for the limit of large p-region widths where transistors are in a nonpunch-through mode of operation. A comparison between the results of the unified theory and other existing models and experimental data is also presented.