Title :
3 Gbit/s two-level to 1.5 Gsymbol/s four-level converter GaAs IC for two electrode semiconductor optical amplifier modulators
Author :
Riishoj, J. ; Nielsen, T.N. ; Gliese, U. ; Stubkjaer, Kristian E
Author_Institution :
Tech. Univ. of Denmark, Lyngby, Denmark
fDate :
6/24/1993 12:00:00 AM
Abstract :
A novel design of a 50 Omega impedance model matched two-to-four level convertor GaAs IC for two electrode semiconductor optical amplifier modulators is presented. Eye diagrams with good eye openings and 0.33 V spacing between adjacent logic levels are demonstrated for bit rates up to 3 Gbit/s.
Keywords :
III-V semiconductors; application specific integrated circuits; convertors; digital communication systems; digital integrated circuits; encoding; field effect integrated circuits; gallium arsenide; optical communication equipment; optical modulation; 3 Gbit/s; ASIC; GaAs; bit rates; encoder; modulators; semiconductor optical amplifier; two electrode; two-to-four level convertor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930784
