Title :
39 GHz monolithic coplanar waveguide amplifier using doped channel HFET technology on InP
Author :
Newson, D.J. ; Birdsall, P. ; Loosemore, P.H. ; Henning, I.D.
Author_Institution :
BT Labs., Ipswich, UK
fDate :
6/24/1993 12:00:00 AM
Abstract :
A single-state amplifier has been designed and fabricated using 0.25 mu m gate length, doped-channel HFET technology on InP substrates. Coplanar waveguide (CPW) was used for impedance matching. A gain of 14.4 dB was measured at 39 GHz.
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; impedance matching; indium compounds; microwave amplifiers; 0.25 micron; 14.4 dB; 39 GHz; CPW; In 0.53Ga 0.47As-InP; InP substrates; MMIC; doped channel HFET technology; gate length; impedance matching; monolithic coplanar waveguide amplifier; single-state amplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930787
