• DocumentCode
    912117
  • Title

    39 GHz monolithic coplanar waveguide amplifier using doped channel HFET technology on InP

  • Author

    Newson, D.J. ; Birdsall, P. ; Loosemore, P.H. ; Henning, I.D.

  • Author_Institution
    BT Labs., Ipswich, UK
  • Volume
    29
  • Issue
    13
  • fYear
    1993
  • fDate
    6/24/1993 12:00:00 AM
  • Firstpage
    1177
  • Lastpage
    1178
  • Abstract
    A single-state amplifier has been designed and fabricated using 0.25 mu m gate length, doped-channel HFET technology on InP substrates. Coplanar waveguide (CPW) was used for impedance matching. A gain of 14.4 dB was measured at 39 GHz.
  • Keywords
    III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; impedance matching; indium compounds; microwave amplifiers; 0.25 micron; 14.4 dB; 39 GHz; CPW; In 0.53Ga 0.47As-InP; InP substrates; MMIC; doped channel HFET technology; gate length; impedance matching; monolithic coplanar waveguide amplifier; single-state amplifier;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930787
  • Filename
    219253
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=912117