• DocumentCode
    912143
  • Title

    Direct extraction of MOSFET dynamic thermal characteristics from standard transistor structures using small signal measurements

  • Author

    Redman-White, William ; Lee, M.S.L. ; Tenbroek, B.M. ; Uren, M.J. ; Bunyan, R.J.T.

  • Author_Institution
    Southampton Univ., UK
  • Volume
    29
  • Issue
    13
  • fYear
    1993
  • fDate
    6/24/1993 12:00:00 AM
  • Firstpage
    1180
  • Lastpage
    1181
  • Abstract
    A method is presented for directly obtaining the temperature rise in MOSFETs due to channel current self-heating. The technique is based on small signal measurements, and also provides thermal time-constant data. No special layout structures are needed, making it suitable for bulk and SOI technologies. Experimental results are compared with data obtained using thermal noise measurements with a special SOI MOSFET, and the two figures show good agreement.
  • Keywords
    insulated gate field effect transistors; semiconductor-insulator boundaries; temperature distribution; thermal analysis; MOSFETs; SOI MOSFET; channel current self-heating; dynamic thermal characteristics; small signal measurements; temperature rise; thermal capacity; thermal time-constant data;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930789
  • Filename
    219255
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=912143