DocumentCode
912146
Title
Some new properties of forward-biased emitter-base junction of gigahertz silicon transistors
Author
Chamberlain, S.G.
Author_Institution
University of Waterloo, Department of Electrical Engineering, Waterloo, Canada
Volume
6
Issue
26
fYear
1970
Firstpage
843
Lastpage
845
Abstract
Accurate numerical solutions of a p+-n junction revealed that its capacitance becomes negative under large forward bias. Small-signal measurements were made on the forward-biased emitter-base junction of transistors in the frequency range of 1 MHz-2.4 GHz. These measurements revealed the negative capacitance (inductive effects). The numerical and experimental results are in good agreement.
Keywords
microwave devices; p-n junctions; transistors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19700582
Filename
4235091
Link To Document