• DocumentCode
    912177
  • Title

    Circuit representation of avalanche region of IMPATT diodes for different carrier velocities and ionisation rates of electrons and holes

  • Author

    Hulin, R. ; Claassen, M. ; Harth, W.

  • Author_Institution
    Technische Universitÿt Braunschweig, Institut fÿr Hochfrequenztechnik, Braunschweig, West Germany
  • Volume
    6
  • Issue
    26
  • fYear
    1970
  • Firstpage
    849
  • Lastpage
    850
  • Abstract
    A parallel resonant circuit representing the small-signal behaviour of the avalanche region of IMPATT diodes is given. The components are calculated in a nonquasistatic manner for different ionisation rates and drift velocities of electrons and holes. With the results, the avalanche frequencies of Si, Ge and GaAs as functions of the avalanche zone width are compared.
  • Keywords
    IMPATT devices; equivalent circuits;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19700585
  • Filename
    4235094
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=912177