Determination of carrier lifetime in p-i-n diodes by ramp recovery

The ramp recovery method for the measurement of carrier lifetime in p-i-n diodes is analyzed to show that B. Tien and C. Hu´s (1988) formula tau =(t/sub A/(t/sub A/+t/sub B/))/sup 1/2/, where t/sub A/ and t/sub B/ are the two intervals for the recovery, gives a good estimate of the lifetime. The recovery can be assumed to be complete at a time t/sub 2/ at which the reverse current has reduced to 10% of its peak value. This eliminates the necessity of assuming the ramp recovery waveform to be a triangle.<>