Title :
Infra-red sensitivity of bulk-barrier diodes due to lattice defects
Author_Institution :
Democritus University of Thrace, Laboratory of Electrotechnical and Electronic Materials Technology, Department of Electrical Engineering, School of Engineering, Xanthi, Greece
fDate :
10/1/1987 12:00:00 AM
Abstract :
Bulk-barrier diodes (BBDs) are majority carrier Si devices; their electrical characteristics can be adjusted by process design. Measurements of the quantum efficiency have been made in the wavelength range of 1.4¿2.0 ¿m. The infra-red sensitivity of a BBD in this region is explained by the excitation of carriers from deep traps produced by ion implantation.
Keywords :
elemental semiconductors; ion implantation; photodiodes; silicon; 1.4 to 2.0 micron; BBDs; Si; bulk-barrier diodes; deep traps; electrical characteristics; infra-red sensitivity; ion implantation; lattice defects; majority carrier; process design; quantum efficiency;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
DOI :
10.1049/ip-i-1.1987.0028
