• DocumentCode
    912297
  • Title

    Observation of high-field domains in n type indium phosphide

  • Author

    Boers, P.M. ; Acket, G.A. ; Paxman, D.H. ; Tree, R.J.

  • Author_Institution
    Philips Research Laboratories, NV Philips´ Gloeilampenfabrieken, Eindhoven, Netherlands
  • Volume
    7
  • Issue
    1
  • fYear
    1971
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Transit-time oscillations involving dipole domains in long samples of InP are reported. Impact ionisation can occur within the domains. The domain velocity was determined by probe measurements. Under certain circumstances, oscillations at frequencies much higher than the transit-time frequency were observed. Conclusions concerning the velocity/field characteristic are presented.
  • Keywords
    domains; indium compounds; microwave generation; semiconductor materials; <111> oriented samples; high field domains; impact ionization; long samples; n type InP; probe measurements; transit time frequencies; velocity field characteristics;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19710001
  • Filename
    4235105