DocumentCode
912297
Title
Observation of high-field domains in n type indium phosphide
Author
Boers, P.M. ; Acket, G.A. ; Paxman, D.H. ; Tree, R.J.
Author_Institution
Philips Research Laboratories, NV Philips´ Gloeilampenfabrieken, Eindhoven, Netherlands
Volume
7
Issue
1
fYear
1971
Firstpage
1
Lastpage
2
Abstract
Transit-time oscillations involving dipole domains in long samples of InP are reported. Impact ionisation can occur within the domains. The domain velocity was determined by probe measurements. Under certain circumstances, oscillations at frequencies much higher than the transit-time frequency were observed. Conclusions concerning the velocity/field characteristic are presented.
Keywords
domains; indium compounds; microwave generation; semiconductor materials; <111> oriented samples; high field domains; impact ionization; long samples; n type InP; probe measurements; transit time frequencies; velocity field characteristics;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19710001
Filename
4235105
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