The Nature of the Deep Hole Trap in MOS Oxides

We have investigated hole and electron trapping events at E´ deep hole traps in metal-oxide-semiconductor oxides. Using a sequence of ultraviolet irradiations, electron spin resonance measurements, and capacitance versus voltage measurements, we have obtained results which are completely consistent with a simple oxygen vacancy model for the hole trap. However, our results are inconsistent with the bond strain gradient model proposed by Grunthaner et al.