Title :
Versatile GaAs triangular barrier transistor structure grown by molecular beam epitaxy
Author :
Al-Bustani, A.A. ; Rees, P.K.
Author_Institution :
Lancashire Polytechnic, Faculty of Technology, School of Electrical and Electronic Engineering, Preston, UK
fDate :
12/1/1987 12:00:00 AM
Abstract :
An n-type GaAs triangular barrier transistor (TBT) has been grown by molecular beam epitaxy. Log Io against VCE and linear IC/VCE characteristics have been measured using voltage and current sources to apply the base bias. For a 100 ohm load resistor, the TBT has a power gain of 12.8. An outline theory explaining the results is presented.
Keywords :
III-V semiconductors; bipolar transistors; gallium arsenide; molecular beam epitaxial growth; power transistors; GaAs; III-V semiconductors; bipolar power transistor; molecular beam epitaxy; n-type; triangular barrier transistor;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
DOI :
10.1049/ip-i-1.1987.0035
