DocumentCode :
912469
Title :
Implications of Analytical Investigations About the Semiconductor Equations on Device Modeling Programs
Author :
Selberherr, Siegfried ; Ringhofer, Christian A.
Author_Institution :
Abteilung Physikalische Elektronik, Institut fuer Allgemeine Elektrotechnik und Elektronik, Wien, Austria
Volume :
3
Issue :
1
fYear :
1984
fDate :
1/1/1984 12:00:00 AM
Firstpage :
52
Lastpage :
64
Abstract :
This paper gives guidelines for the development of computer programs for the numerical simulation of semiconductor devices. For this purpose, the basic mathematical results on the corresponding elliptic boundary value problem are reviewed. Particularly, existence, smoothness, and structure of the solutions of the fundamental semiconductor equations are discussed. Various feasible approaches to the numerical solution of the semiconductor equations are described. Much emphasis is placed on constructive remarks to help authors of device simulation programs make decisions on their code design problems. Thus criteria for an optimal mesh generation strategy are given. The iterative solution of the systems of nonlinear and linear equations obtained by discretizing the semiconductor equations is discussed. An example shows the power of these concepts combined with modern numerical methods in comparison to classical approaches.
Keywords :
Boundary value problems; Charge carrier processes; Conductors; Guidelines; Laboratories; Mesh generation; Nonlinear equations; Numerical simulation; Semiconductor devices; Semiconductor process modeling;
fLanguage :
English
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0278-0070
Type :
jour
DOI :
10.1109/TCAD.1984.1270057
Filename :
1270057
Link To Document :
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