• DocumentCode
    912482
  • Title

    Three-Dimensional Monte Carlo Simulations--Part I: Implanted Profiles for Dopants in Submicron Device

  • Author

    Mazzone, A.M. ; Rocca, G.

  • Author_Institution
    CNR Institute LAMEL, Bologna, Italy
  • Volume
    3
  • Issue
    1
  • fYear
    1984
  • fDate
    1/1/1984 12:00:00 AM
  • Firstpage
    64
  • Lastpage
    71
  • Abstract
    Monte Carlo methods are used to simulate implants. The results fall into two different groups. On one side, size-dependent effects due to the presence of the mask are analyzed and discussed. On the other side, physical mechanisms dependent on dose and energy, like channeling and transition crystal-amorphous, are briefly reviewed.
  • Keywords
    Amorphous materials; Circuit simulation; Computational modeling; Control theory; Distribution functions; Industrial electronics; Lattices; Mathematics; Monte Carlo methods; Semiconductor process modeling;
  • fLanguage
    English
  • Journal_Title
    Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0278-0070
  • Type

    jour

  • DOI
    10.1109/TCAD.1984.1270058
  • Filename
    1270058
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=912482