Title :
On the validity of the Einstein relation for nonequilibrium conditions
Author :
Marshak, A.H. ; Hamilton, D.J.
fDate :
6/1/1970 12:00:00 AM
Abstract :
The flux equation governing the behavior of mobile particles in semiconductor material is derived from the Boltzmann transport equation. It is then shown that under suitable assumptions the Einstein relation frequently used in device analysis is valid for nonequilibrium conditions.
Keywords :
Circuit testing; Coaxial components; Envelope detectors; Equations; K-band; Plasma density; Radio frequency; Semiconductor diodes; Solid state circuits; Voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1970.7802
