DocumentCode :
912525
Title :
An Efficient MOS Transistor Model for Computer-Aided Design
Author :
Silburt, Allan L. ; Foss, Richard C. ; Petrie, Willaim F.
Author_Institution :
Mosaid Inc., Kanata, Ont., Canada
Volume :
3
Issue :
1
fYear :
1984
fDate :
1/1/1984 12:00:00 AM
Firstpage :
104
Lastpage :
111
Abstract :
This paper describes a dc model for MOS enhancement-mode transistors. The transport current and threshold voltage equations are simpler in form than many other models that are currently in use. This greatly eases the problem of extracting parameter values from measured data, since major parameters are directly related to process constants and secondary parameters follow from realistic approximations. The model has been successfully fitted to a high degree of accuracy to several NMOS and CMOS processes. When installed in a Computer-Aided Design (CAD) program, the model can substantially improve the execution time for circuit simulations.
Keywords :
Circuit simulation; Data mining; Design automation; Equations; Intrusion detection; MOSFETs; Power system modeling; SPICE; Semiconductor device modeling; Threshold voltage;
fLanguage :
English
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0278-0070
Type :
jour
DOI :
10.1109/TCAD.1984.1270063
Filename :
1270063
Link To Document :
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